MAAP-015030

MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Features  12 W X-Band Power Amplifier  21 dB Large Signal Gain  41 dBm Saturated Pulsed Output Power  40% Power Added Efficiency  On Chip Gate Bias Circuit  100% On-wafer DC & RF Power Tested  100% Visual Inspection to MIL-STD-833  Bare Die Description The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit. This device is well suited for communication and radar applications. Ordering Information Part Number MAAP-015030-DIE MAAP-015030-DIEEV1 MAAP-015030-DIEEV2 Package Die in Vacuum release gel pack Direct gate bias sample board On chip gate bias sample board Functional Schematic VG1 VB1 VB2 VG2 45 7 16 2 Bias VD1 8 RFIN 22 VG1 20 Bias 21 16 18 17 15 VB1 VB2 VG2 14 VD1 Rev. V4 VD2 9 11 RFOUT 13 VD2 Pad Conf...