MAAP-015024

MAAP-015024 Power Amplifier, 8 W 14.5 - 17.5 GHz Rev. V3 Features  8 W Power Amplifier  20 dB Small Signal Gain  39 dBm Saturated Pulsed Output Power  Dual Sided Bias Architecture  100% On-wafer DC & RF Power Tested  100% Visual Inspection to MIL-STD-833  Bare Die Functional Schematic VG1 VD1 13 VG2 6 VD2 VG3 9 11 VD3 13 Description The MAAP-015024 three stage 14.5 - 17.5 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 39 dBm and a small signal gain of 20 dB. The power amplifier must be biased directly on both sides of the die. This MMIC uses MACOM’s GaAs pHEMT device technology and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation for protection and backside via holes and gold metallization to allow a conductive epoxy die attach process. RFIN 28 14 RFOUT 27 25 22 VG1 VD1 VG2 Pad Configuration 19 17 VD2 VG3 15 VD3 Pad No. Function Description This device is well suited for communication and radar applications. 1 VG1 1st Stage Gate Voltage 3 VD1 1st Stage Drain Voltage 6 VG2 2nd Stage Gate Voltage Ordering Information 9 VD2 2nd Stage Drain Voltage 11 VG3 3rd Stage Gate Voltage Part Number MAAP-015024-DIE MAAP-015024-DIEEV1 MAAP-015024-DIEEV2 Package Die in vacuum release gel pack Direct gate bias sample board On chip gate bias sample board 13 VD3 3rd Stage Drain Voltage 14 RFOUT RF Output 15 VD3 3rd Stage Drain Voltage 17 VG3 3rd Stage Gate Voltage 19 ...