MAAP-015016-DIE

MAAP-015016-DIE Ka-Band 4 W Power Amplifier 32 - 38 GHz Features  Frequency Range: 32 to 38 GHz  Small Signal Gain: 18 dB  Saturated Power: 37 dBm  Power Added Efficiency: 23%  100% On-Wafer RF and DC Testing  100% Visual Inspection to MIL-STD-883 Method 2010  Bias VD = 6 V, ID = 2.5 A, VG = -0.9 V  Dimensions: 3.09 x 5.67 x 0.05 mm Description The MAAP-015016-DIE is a wideband power amplifier operating from 32 to 38 GHz, with a saturated output power of 37 dBm, 23% PAE and small signal gain of 18 dB. The design is fully matched to 50 Ohms and includes on-chip ESD protection and integrated DC blocking caps on both I/O ports. The device is manufactured in 0.15 µm GaAs pHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. The part is well suited for Radar and Communications applications. Ordering Information1 Part Number MAAP-015016-DIE Package Die in Gel Pack1 MAAP-015016-DIEEV1 Evaluation Module 1. Die quantity varies. Functional Diagram Rev. V1 Pin Configuration2 Pad Function Description 1 2,14 3,13 4,12 5,11 6,10 7,9 8 RFIN VG1,2,3 VD1 VD2 VD3 VG4 VD4 RFOUT Input, matched to 50 Ω Gate Voltage Stage 1 - 3 Drain Voltage Stage 1 Drain Voltage Stage 2 Drain Voltage Stage 3 Gate Voltage Stage 4 Drain Voltage Stage 4 Output, matched to 50 Ω 2. Backside metal is RF, DC and thermal ground. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU 1 M/A-COM Technology Solutions Inc. (MACOM) and...