TF410

Ordering number : ENA2007 TF410 SANYO Semiconductors DATA SHEET TF410 N-Channel Silicon Junction FET Impedance Converter, Infrared Sensor Applications Applications Impedance conversion, infrared sensor applications Features Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm) Small IGSS : max --500pA (VGSS= --20V, VDS=0V) Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG ID PD Tj Tstg Conditions Ratings 40 --40 10 1 30 150 --55 to +150 Unit V V mA mA mW °C °C LOT No. LOT No. Package Dimensions unit : mm (typ) 7055-003 0.8 0.1 0.6 0.2 3 0.11 0 to 0.02 1.0 0.1 1 0.175 2 0.15 0.27 0.05 1 2 1 : Source 2 : Drain 3 : Gate 3 SANYO : USFP 0.05 Product & Package Information Package : USFP JEITA, JEDEC :- Minimum Packing Quantity : 10,000 pcs./reel Packing Type: TL Marking 3 BTL Electrical Connection 3 1 : Source 2 : Drain 3 : Gate 1 2 Top view 12 http://semicon.sanyo.com/en/network 22912GB TKIM TC-00002703 No. A2007-1/3 Electrical Characteristics at Ta=25°C TF410 Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol ...