NGTG50N60FWG

NGTG50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation 5 ms Short−Circuit Capability These are Pb−Free Devices Typical Applications Solar Inverters Uninterruptible Power Supples (UPS) Motor Drives ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 100 50 Pulsed collector current, Tpulse limited by TJmax Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C Gate−emitter voltage Transient Gate−Emitter Voltage ICM 200 A tSC 5 ms VGE $20 V $30 Power Dissipation @ TC = 25°C @ TC = 100°C PD W 223 89 Operating junction temperature range TJ −55 to +150 °C Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Tstg TSLD −55 to +150 260 °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 50 A, 600 V VCEsat = 1.50 V C G E G C E TO−247 CASE 340L STYLE 4 MARKING DIAGRAM G50N60F AYWWG ...