A1608

SMD Type Features High fT: fT=400MHz. PNP Silicon Epitaxia 2SA1608 TransistIoCrs Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -60 -40 -5 -500 150 150 -55 to +150 Unit V V V mA mW 1 Emitter 2 Base 3 Collector Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *. PW 350ìs,duty cycle 2% hFE Classification Marking hFE Y12 75 150 Y13 100 200 Symbol Testconditons ICBO VCB = -40V, IE=0 IEBO VEB = -4V, IC=0 hFE VCE = -2V , IC = -150mA VCE(sat) IC = -500mA , IB = -50mA VBE(sat) IC = -500mA , IB = -50mA fT VCE = -10V , IE = 20mA Cob VCB = -10V , IE = 0 , f = 1.0MHz ton VCC = -30V , tstg IC = 150mA , toff IB1 = -IB2 = 15mA Y14 150 300 Min Typ Max Unit -100 nA -100 nA 75 140 300 -0.45 -0.75 V -1 -1.3 V 150 400 MHz 5 8 pF 25 ns 70 ns 100 ns www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ ...