www.vishay.com
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
Case Style 1.5KE
PRIMARY CHARACTERISTICS
VWM
5.0 V to 18 V
VBR (uni-directional)
6.0 V to 21.2 V
VBR (bi-directional)
9.2 V to 21.2 V
PPPM
1500 W
PD 6.5 W
IFSM
200 A
TJ max.
175 °C
Polarity
Uni-directional, bi-directional
Package
1.5KE
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE18C). Electrical characteristics apply in both directions.
FEATURES
• Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication.
MECHANICAL DATA
Case: Molded epoxy body over passivated junction Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant and commercial grade Base P/NHE3 - RoHS compliant and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the color band denotes cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1) Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)
Power dissipation on infinite heatsink at TL = 75 °C (fig. 8) Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Maximum instantaneous forward voltage at 100 A for uni-directional only
Operating junction and storage temperature range
Notes (1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 (2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
SYMBOL PPPM IPPM PD IFSM VF
TJ, TSTG
LIMIT 1500 See next table 6.5 200 3.5 - 55 to + 175
UNIT W A W A V °C
Revision: 18-Sep-12
1 Document Number: 88356
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA) (TA = 25 °C unless otherwise noted)
JEDEC TYPE NUMBER
GENERAL SEMICONDUCTOR
PART NUMBER
STAND-OFF VOLTAGE VWM (V)
MINIMUM BREAKDOWN
VOLTAGE AT 1.0 mA
VBR (V)
MAXIMUM REVERSE LEAKAGE
AT VWM ID (μA)
MAXIMUM CLAMPING VOLTAGE AT IPP = 1.0 A
VC (V)
MAXIMUM CLAMPING VOLTAGE AT IPP = 10 A
VC (V)
MAXIMUM PEAK PULSE
CURRENT IPP (A)
UNI-DIRECTIONAL TYPES
1N6373 (2)
ICTE5 (2)
5.0
6.0 300 7.1 7.5 160
1N6374
ICTE8
8.0
9.4
25.0 11.3 11.5
100
1N6375
ICTE10
10.0 11.7 2.0 13.7 14.1 90
1N6376 1N6377 1N6378
ICTE12 ICTE15 ICTE18
12.0 14.1 2.0 16.1 16.5 70 15.0 17.6 2.0 20.1 20.6 60 18.0 21.2 2.0 24.2 25.2 50
BI-DIRECTIONAL TYPES
1N6382 1N6383
ICTE8C
8.0 9.4
50
11.4
11.6
100
ICTE10C
10.0 11.7
2.0
14.1
14.5
90
1N6384 1N6385 1N6386
ICTE12C
12.0 14.1
2.0
16.7
17.1
70
ICTE15C
15.0 17.6
2.0
20.8
21.4
60
ICTE18C
18.0 21.2
2.0
24.8
25.5
50
Notes
(1) “C” suffix indicates bi-directional (2) ICTE5 and 1N6373 are not available as bi-directional (3) Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual VC (clamping voltage) to the VBR
(breakdown voltage) as measured on a specific device
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
ICTE5-E3/54
0.968
54
ICTE5HE3/54 (1)
0.968
54
Note (1) AEC-Q101 qualified
BASE QUANTITY 1400 1400
DELIVERY MODE 13" diameter paper tape and reel 13" diameter paper tape and reel
Revision: 18-Sep-12
2 Document Number: 88356
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C
10
1
100 000 10 000 1000
Measured at Zero Bias
Meas.