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ICTE18C Dataheets PDF



Part Number ICTE18C
Manufacturers Vishay
Logo Vishay
Description Transient Voltage Suppressors
Datasheet ICTE18C DatasheetICTE18C Datasheet (PDF)

www.vishay.com ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB® Transient Voltage Suppressors Case Style 1.5KE PRIMARY CHARACTERISTICS VWM 5.0 V to 18 V VBR (uni-directional) 6.0 V to 21.2 V VBR (bi-directional) 9.2 V to 21.2 V PPPM 1500 W PD 6.5 W IFSM 200 A TJ max. 175 °C Polarity Uni-directional, bi-directional Package 1.5KE DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional types, use C suffix (e.g. ICTE18C). Electrical characteristic.

  ICTE18C   ICTE18C


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www.vishay.com ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB® Transient Voltage Suppressors Case Style 1.5KE PRIMARY CHARACTERISTICS VWM 5.0 V to 18 V VBR (uni-directional) 6.0 V to 21.2 V VBR (bi-directional) 9.2 V to 21.2 V PPPM 1500 W PD 6.5 W IFSM 200 A TJ max. 175 °C Polarity Uni-directional, bi-directional Package 1.5KE DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional types, use C suffix (e.g. ICTE18C). Electrical characteristics apply in both directions. FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. MECHANICAL DATA Case: Molded epoxy body over passivated junction Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant and commercial grade Base P/NHE3 - RoHS compliant and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the color band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1) Peak pulse current with a 10/1000 μs waveform (1) (fig. 3) Power dissipation on infinite heatsink at TL = 75 °C (fig. 8) Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) Maximum instantaneous forward voltage at 100 A for uni-directional only Operating junction and storage temperature range Notes (1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 (2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum SYMBOL PPPM IPPM PD IFSM VF TJ, TSTG LIMIT 1500 See next table 6.5 200 3.5 - 55 to + 175 UNIT W A W A V °C Revision: 18-Sep-12 1 Document Number: 88356 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA) (TA = 25 °C unless otherwise noted) JEDEC TYPE NUMBER GENERAL SEMICONDUCTOR PART NUMBER STAND-OFF VOLTAGE VWM (V) MINIMUM BREAKDOWN VOLTAGE AT 1.0 mA VBR (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM CLAMPING VOLTAGE AT IPP = 1.0 A VC (V) MAXIMUM CLAMPING VOLTAGE AT IPP = 10 A VC (V) MAXIMUM PEAK PULSE CURRENT IPP (A) UNI-DIRECTIONAL TYPES 1N6373 (2) ICTE5 (2) 5.0 6.0 300 7.1 7.5 160 1N6374 ICTE8 8.0 9.4 25.0 11.3 11.5 100 1N6375 ICTE10 10.0 11.7 2.0 13.7 14.1 90 1N6376 1N6377 1N6378 ICTE12 ICTE15 ICTE18 12.0 14.1 2.0 16.1 16.5 70 15.0 17.6 2.0 20.1 20.6 60 18.0 21.2 2.0 24.2 25.2 50 BI-DIRECTIONAL TYPES 1N6382 1N6383 ICTE8C 8.0 9.4 50 11.4 11.6 100 ICTE10C 10.0 11.7 2.0 14.1 14.5 90 1N6384 1N6385 1N6386 ICTE12C 12.0 14.1 2.0 16.7 17.1 70 ICTE15C 15.0 17.6 2.0 20.8 21.4 60 ICTE18C 18.0 21.2 2.0 24.8 25.5 50 Notes (1) “C” suffix indicates bi-directional (2) ICTE5 and 1N6373 are not available as bi-directional (3) Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual VC (clamping voltage) to the VBR (breakdown voltage) as measured on a specific device ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE ICTE5-E3/54 0.968 54 ICTE5HE3/54 (1) 0.968 54 Note (1) AEC-Q101 qualified BASE QUANTITY 1400 1400 DELIVERY MODE 13" diameter paper tape and reel 13" diameter paper tape and reel Revision: 18-Sep-12 2 Document Number: 88356 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 10 1 100 000 10 000 1000 Measured at Zero Bias Meas.


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