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ICTE-18C Dataheets PDF



Part Number ICTE-18C
Manufacturers Microsemi
Logo Microsemi
Description TRANSIENT VOLTAGE SUPPRESSOR
Datasheet ICTE-18C DatasheetICTE-18C Datasheet (PDF)

SCOTTSDALE DIVISION ICTE-5 thru ICTE-45C, e3 TRANSIENT VOLTAGE SUPPRESSOR WWW.Microsemi .COM DESCRIPTION The ICTE-5 through ICTE-45C series of Transient Voltage Suppressors (TVSs) are designed for the protection of integrated circuits that require very low Clamping Voltages (VC) during a transient threat. Due to their very fast response time, protection level and high Peak Pulse Power (PPP) capability, they are extremely effective in providing protection against line transients generated by: .

  ICTE-18C   ICTE-18C


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SCOTTSDALE DIVISION ICTE-5 thru ICTE-45C, e3 TRANSIENT VOLTAGE SUPPRESSOR WWW.Microsemi .COM DESCRIPTION The ICTE-5 through ICTE-45C series of Transient Voltage Suppressors (TVSs) are designed for the protection of integrated circuits that require very low Clamping Voltages (VC) during a transient threat. Due to their very fast response time, protection level and high Peak Pulse Power (PPP) capability, they are extremely effective in providing protection against line transients generated by: voltage reversals, capacitive or inductive load switching, electromechanical switching, electrostatic discharge and electromagnetic coupling. APPEARANCE IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES • This series of TVS devices is designed to protect Bipolar, MOS and Schottky improved integrated circuits. • Transient protection for CMOS, MOS, Bipolar, ICS (TTL, ECL, DTL, RTL and linear functions) • 5.0 to 45 volts • Low clamping ratio • RoHS Compliant devices available by adding “e3” suffix APPLICATIONS / BENEFITS • These transient voltage suppressors are designed for the protection of integrated circuits. Characterized by a very low clamping voltage together with a low standoff voltage, they afford a high degree of protection to: TTL, ECL, DTL, MOS, CMOS, VMOS, HMOS, NMOS and static memory circuits. MAXIMUM RATINGS • 1500 Watts of Peak Pulse Power (PPP) dissipation at 25oC and 10x1000μs • tclamping (0 volts to V(BR) min): <100 ps theoretical for unidirectional and <5 ns for bidirectional • Operating and Storage temperatures: -65oC to +150oC. • Forward surge rating: 200 amps, 1/120 second at 25oC. (Applies to Unidirectional or single direction only). • Steady State power dissipation: 5 watts. • Repetition rate (duty cycle): .05% • Clamping Factor: 1.33 @ Full rated power. 1.20 @ 50% rated power. • Clamping Factor: The ratio of the actual VC (Clamping Voltage) to the actual V(BR) (Breakdown Votlage) as measured on a specific device. MECHANICAL AND PACKAGING • CASE: Void-free, transfer molded thermosetting epoxy body meeting UL94V-0 • FINISH: Tin-lead or RoHS Compliant matteTin plating solderable per MIL-STD-750, method 2026 • POLARITY: Cathode connected to case and marked. Bidirectional not marked. • WEIGHT: 1.5 grams (approx.) • MOUNTING POSITION: Any • See package dimension on last page ICTE-5 thru ICTE-45C, e3 Copyright © 2008 10-09-2008 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 WWW.Microsemi .COM SCOTTSDALE DIVISION ICTE-5 thru ICTE-45C, e3 TRANSIENT VOLTAGE SUPPRESSOR ELECTRICAL CHARACTERISTICS @ 25oC (UNIDIRECTIONAL) STAND-OFF VOLTAGE (NOTE 1) MAXIMUM REVERSE LEAKAGE @VWM MINIMUM* BREAKDOWN VOLTAGE @ 1.0 mA MICROSEMI VWM ID V(BR) PART NUMBER VOLTS μA VOLTS ICTE-5 5.0 300 6.0 ICTE-8 8.0 25 9.4 ICTE-10 10.0 2 11.7 ICTE-12 12.0 2 14.1 ICTE-15 15.0 2 17.6 ICTE-18 18.0 2 21.2 ICTE-22 22.0 2 25.9 ICTE-36 36.0 2 42.4 ICTE-45 45.0 2 52.9 VF at 100 amps peak, 8.3 msec sine wave equals 3.5 volts maximum. MAXIMUM CLAMPING VOLTAGE (Fig. 2) IPP1 = 1A VC VOLTS 7.1 11.3 13.7 16.1 20.1 24.2 29.8 50.6 63.3 MAXIMUM CLAMPING VOLTAGE (Fig. 2) @ IPP2 = 10A VC VOLTS 7.5 11.5 14.1 16.5 20.6 25.2 32.0 54.3 70.0 MAXIMUM PEAK PULSE CURRENT @ 10 x 1000μs IPP3 A 160 100 90 70 60 50 40 23 19 ELECTRICAL CHARACTERISTICS @ 25oC (Test Both Polarities for BIDIRECTIONAL) ICTE-5C 5.0 300 6.0 7.1 7.5 ICTE-8C 8.0 25 9.4 11.4 11.6 ICTE-10C 10.0 2 11.7 14.1 14.5 ICTE-12C 12.0 2 14.1 16.7 17.1 ICTE-15C 15.0 2 17.6 20.8 21.4 ICTE-18C 18.0 2 21.2 24.8 25.5 ICTE-22C 22.0 2 25.9 30.8 32.0 ICTE-36C 36.0 2 42.4 50.6 54.3 ICTE-45C 45.0 2 52.9 63.3 70.0 C Suffix indicates Bidirectional 160 100 90 70 60 50 40 23 19 NOTE 1: TVSs are normally selected according to the reverse “Stand Off Voltage” (VWM) which should be equal to or greater than the dc or continuous peak operating voltage level. * The minimum breakdown voltage as shown takes into consideration the +1 volt tolerance normally specified for power supply regulation on most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated power supply voltages are employed. OUTLINE AND CIRCUIT ICTE-5 thru ICTE-45C, e3 FIGURE 1 Peak Pulse Power vs. Pulse Time (TW) in μs Copyright © 2008 10-09-2008 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 SCOTTSDALE DIVISION ICTE-5 thru ICTE-45C, e3 TRANSIENT VOLTAGE SUPPRESSOR WWW.Microsemi .COM FIGURE 2 Typical Characteristic Clamping Voltage vs. Peak Pulse Current FIGURE 3 Typical Capacitance vs. Breakdown Voltage (Unidirectional Types) PACKAGE DIMENSIONS FIGURE 4 Typical Capacitance vs. Breakdown Voltage (Bidirectional Types) Dimensions in inches (mm) Copyright © 2008 10-09-.


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