N-Channel MOSFET
Main Product Characteristics
VDSS
75V
RDS(on) 6mΩ (typ.)
ID 100A
TO-220
Features and Benefits
Advanced MOSFET p...
Description
Main Product Characteristics
VDSS
75V
RDS(on) 6mΩ (typ.)
ID 100A
TO-220
Features and Benefits
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Lead free product
SSF7508
75V N-Channel MOSFET
Marking and Pin Schematic Diagram Assignment
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V ① Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH ② Avalanche Current @ L=0.3mH ②
Operating Junction and Storage Temperature Range
Max. 100 70 400 200 1.3 75 ± 20 205 37 -55 to + 175
Units
A
W W/°C
V V mJ A °C
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Rev.2.3
SSF7508
75V N-Channel MOSFET
Thermal Resistance
Symbol RθJC
RθJA
Characteristics
Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ. — — —
Max. 0....
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