FDB3672

FDB3672 July 2004 FDB3672 N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ Features rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A Qg(tot) = 24nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Formerly developmental type 82760 GATE DRAIN (FLANGE) Applications DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42V Automotive Load Control Electronic Valve Train Systems D SOURCE TO-263AB FDB SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, RθJA = 43oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area G S Ratings 100 ±20 44 31 7.2 Figure 4 120 120 0.8 -55 to 175 Units V V A A A A mJ W W/oC oC 1.25 62 43 oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and envi...