SMD Type
MOSFET
200V N-Channel PowerTrench MOSFET KDB2670(FDB2670)
Features
19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability
+0.25.28 -0.2
+0.28.7 -0.2
TO-263
+0.2
4.57+0.1 -0.2 1.27-0.1
Unit: mm
+0.11....
