N-Channel MOSFET
SMD Type
MOSFET
N-Channel PowerTrench MOSFET KDB2552(FDB2552)
Features
rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A Qg(t...
Description
SMD Type
MOSFET
N-Channel PowerTrench MOSFET KDB2552(FDB2552)
Features
rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A Qg(tot) = 39nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse)
+0.25.28 -0.2
+0.28.7 -0.2
TO-263
+0.2
4.57+0.1 -0.2 1.27-0.1
Unit: mm
+0.11.27 -0.1
+0.22.54 -0.2 15.25-+00..22 5.60
1.27+0.1 -0.1
0.1max
2.54+0.2 -0.2
5.08+0.1 -0.1
0.81+0.1 -0.1
2.54
0.4+0.2 -0.2
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current-Continuous TC=25
TA=25 Power dissipation
Derate above 25 Thermal Resistance Junction to Ambient Channel temperature Storage temperature
Symbol VDSS VGSS
ID
PD
RèJA Tch Tstg
Rating 150 20 37 5 150 1.0 43 175
-55 to +175
Unit V V A A W
W/ /W
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SMD Type
KDB2552(FDB2552)
Electrical Characteristics Ta = 25
Parameter Drain to source breakdown voltage
Symbol VDSS
Drain cut-off current
IDSS
Gate leakage current Gate threshold voltage
IGSS VGS(th)
Drain to source on-state resistance
RDS(on)
Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Reverse Recovery Time Reverse Recovered Charge
Source to Drain Diode Voltage
Ciss Coss Crss Qg(TOT) Qg(TH) Qgs Q...
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