P-Channel Enhancement MOSFET
Features
·Low On resistance. ·-4.5V drive. ·RoHS compliant.
Si4435
P-Channel Enhancement MOSFET
Si4435
Package Dimens...
Description
Features
·Low On resistance. ·-4.5V drive. ·RoHS compliant.
Si4435
P-Channel Enhancement MOSFET
Si4435
Package Dimensions
Specifications
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
Total Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Conditions
PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm)
Ratings
-30 +20 -8 -50 1.3 1.7 150 -55~+150
Unit
V V A A W W 0C 0C
Electrical Characteristics at Ta=250C
Parameter
Symbol
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage Forward Transconductance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
V(BR)DSS IDSS IGSS VGS(th) gFS
RDS(ON) RDS(ON)
Ciss Coss Crss
Conditions
ID=-250uA, VGS=0V VDS=-30V, VGS=0V VGS=+20V, VDS=0V VDS= VGS, ID=-250uA VDS=-5V, ID=-10A ID=-8A, VGS=-10V ID=-7A, VGS=-4.5V VDS=-15V, VGS=0V, f=1MHz VDS=-15V, VGS=0V, f=1MHz VDS=-15V, VGS=0V, f=1MHz
Ratings min typ max
-30 -10 +100
-1.0 -1.5 -3.0 24 15 20 20 35
Unit
V uA nA V S mΩ mΩ pF pF pF
1
Si4435
Electrical Characteristics at Ta=250C (Continued)
Parameter
Symbol
Conditions
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-...
Similar Datasheet