SSF8N65

SSF8N65 Features ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description The SSF8N65 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density. Application ■ High current, high speed switching ■ Ideal for off-line power supply, adaptor, PFC VDSS = 650V ID = 8A Rdson = 0.95Ω (typ.) SSF8N65 TOP View (TO220) Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V IDM Pulsed Drain Current ① PD@TC=25ْC Power Dissipation Linear derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ② IAR Avalanche Current ① EAR Repetitive Avalanche Energy ① dv/dt Peak Diode Recovery dv/dt ③ TJ Operating Junction and TSTG Storage Temperature Range Max. 8.2 5.5 32.8 145 0.8 ±30 586 4 15 4.5 –55 to +150 Thermal Resistance RθJC RθCS Parameter Junction-to-case Case-to-Sink,Flat,Greased Surface Min. — — Typ. Max. — 0.86 0.50 — RθJA Junction-to-Ambient — — 62.5 Units A W W/ Cْ V mJ A mJ V/ns ْC Units ْC/W ...