MMBT7002

MMBT7002 N-Channel MOSFET / 60 Volts / 200mW / SOT-23 Features ◆ High Input Impedance ◆ High Speed Switching ◆ CMOS Logic Compatible Input ◆ Advanced Trench Process Technology ◆ Case Material : Molded Plastic【UL Flammability Classfication Rating 94V-0 】 PACKAGE OUTLINE 1.Gate SOT-23 2. Source 3. Drain Absolute Maximum Ratings【TA=25℃】 Parameter Symbol Drain-Source Voltage Power Dissipation VDS PD Drain Current Thermal Resistance Junction to Air ID RθJA Typical Junction Capacitance CJ Operation Junction Tempreture TJ Storage Tempreture Range Electrical Characteristics TS Parameter Symbol Drain-Source Breakdown Voltage【VGS=0Vdc, ID=10uAdc】 Gate-Threshold Voltage【VDS=VGS, ID=250uAdc】 VBR（DSS） VTTH（GS） Gate-body Leakage【VDS=0Vdc, VGS=±20Vdc】 Zero Gate Voltage Drain Current VDS=60V,VGS=0Vdc VDS=60V,VGS=0Vdc,TA=125℃ On-State Drain Current IGSS IDSS ID（ON） Drain-SourceOn-Resistance VGS=10Vdc,ID=500mAdc VGS=5Vdc,ID=50mAdc γDS（ON） Drain-SourceOn-Voltage VGS=10Vdc,ID=500mAdc VGS=5Vdc,ID=50mAdc VDS（ON） Forward Transcondutance Diode Forward Voltage VDS=10Vdc, ID=200mAdc VgS=0Vdc, IsD=115mAdc GFS VSD Maximum Continuous Drain-Source Diode Current IS Input Capacitance VDS=25Vdc, CISS Output Capacitance VGS=0Vdc , COSS Reverse Transfer Capacitance Turn-on Time Turn-off Time F=1MHZ CγSS tVDD=30Vdc, VGEN=10Vdc , d（ON） tID=200mA,RL=150Ω,RGEN=25 d（OFF） Value 60 200 115 625 10 － 55 to ＋ 150 － 55 to ＋ 150 Unit V mW mA ℃ /W pF ℃ ℃ Min Typ Max Unit...