DatasheetsPDF.com

FJP2145

Fairchild Semiconductor

NPN Power Transistor

FJP2145 — ESBC™ Rated NPN Power Transistor March 2015 FJP2145 ESBC™ Rated NPN Power Transistor ESBC Features (FDC655 ...


Fairchild Semiconductor

FJP2145

File Download Download FJP2145 Datasheet


Description
FJP2145 — ESBC™ Rated NPN Power Transistor March 2015 FJP2145 ESBC™ Rated NPN Power Transistor ESBC Features (FDC655 MOSFET) VCS(ON) 0.21 V IC Equiv. RCS(ON)(1) 2 A 0.105 Ω Low Equivalent On Resistance Very Fast Switch: 150 kHz Wide RBSOA: Up to 1100 V Avalanche Rated Low Driving Capacitance, No Miller Capacitance Low Switching Losses Reliable HV Switch: No False Triggering due to High dv/dt Transients Applications High-Voltage, High-Speed Power Switch Emitter-Switched Bipolar/MOSFET Cascode (ESBC™) Smart Meters, Smart Breakers, SMPS, HV Industrial Power Supplies Motor Drivers and Ignition Drivers Description The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exceptionally low on-resistance and very low switching losses. The ESBC™ switch can be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance. The FJP2145 provides exceptional reliability and a large operating range due to its square reverse-bias-safe-operating-area (RBSOA) and rugged design....




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)