FJB5555

FJB5555 — NPN Silicon Transistor FJB5555 NPN Silicon Transistor Features Fast Speed Switching Wide Safe Operating Area High Voltage Capability Application Electronic Ballast Switched Mode Power Supplies June 2013 1 D2-PAK 1.Base 2.Collector 3.Emitter 1 B C2 E3 Ordering Information Part Number FJB5555TM Marking J5555 Package D2-PAK Packing Method Tape & Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Units BVCBO BVCEO BVEBO IC ICP IB IBP TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Junction Temperature Storage Junction Temperature Range 1050 400 14 5 10 2 4 150 - 55 to +150 V V V A A A A °C °C Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter PD Rθja(1) Rθjc(2) Total Device Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case TA = 25°C TC = 25°C Value 1.6 100 77.75 1.25 Units W W °C/W °C/W Notes: 1. Device...