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FJB102

Fairchild Semiconductor

High Voltage Power Darlington Transistor


Description
FJB102 — NPN High-Voltage Power Darlington Transistor December 2014 FJB102 NPN High-Voltage Power Darlington Transistor Features High DC Current Gain : hFE = 1000 at VCE = 4 V, IC = 3 A (Minimum) Low Collector-Emitter Saturation Voltage Equivalent Circuit C B 1 D2-PAK 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJB102TM Top Mark ...



Fairchild Semiconductor

FJB102

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