FGD5T120SH

FGD5T120SH — 1200 V, 5 A FS Trench IGBT FGD5T120SH 1200 V, 5 A FS Trench IGBT Features FS Trench Technology, Positive Temperature Coefficient High Speed Switching Low Saturation Voltage: VCE(sat) =2.9 V @ IC = 5 A 100% of the Parts tested for ILM(1) High Input Impedance RoHS Compliant Applications Inrush current limitation Lighting Home appliances November 2015 General Description Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for inrush current limitation, lighting and home appliance applications. G E C D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Description VCES VGES IC ILM (1) ICM (2) PD TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage Collector Current Collector Current Clamped Inductive Load Current Pulsed Collector Current @ TC = 25oC @ TC = 100oC @ TC = 25oC Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes: 1. Vcc = 600 V,VGE = 15 V, IC = 12.5 A, RG = 50 2. Limited by Tjmax Inductive Load FGD5T120SH 1200 ±25 ±30 10 5 12.5 12.5 69 28 -55 to +150 -55 to +150 300 Unit V V V A A A A W W oC oC oC ©2015 Fairchild Semiconductor Corporation FGD5T120SH Rev. 1.0 1 www.fairchildsemi.com FGD5T120SH — 1200 V, 5 A FS Trench IGB...