SGM2306
Elektronische Bauelemente
5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET
Description
RoHS Co...
SGM2306
Elektronische Bauelemente
5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET
Description
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
SOT-89
The SGM2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2306 is
universally used for all commercial-industrial applications.
Features
* Capable Of 2.5V Gate Drive * Lower On-Resistance
D
G
S
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,
[email protected] Continuous Drain Current,
[email protected] Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
REF.
A B C D E F
Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
REF.
G H I J K L M
Millimeter
Min. Max. 3.00 REF. 1.50 REF.
0.40 0.52 1.40 1.60 0.35 0.41
5° TYP. 0.70 REF.
Symbol VDS VGS
ID@TA=25 oC ID@TA=70 oC
IDM PD@TA=25 oC
Tj, Tstg
Ratings
20 ±12 5.3 4.3 10 1.5 0.012 -55~+150
Unit V
V A A A W W / oC oC
Thermal Data
Parameter Thermal Resistance Junction-ambient 3
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Max.
Symbol Rthj-a
Ratings 83.3
Unit
oC /W
Any changing of specification will not be informed individual
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Elektronische Bauelemente
SGM2306
5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
...