SGM2306

SGM2306 Elektronische Bauelemente 5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET Description RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-89 The SGM2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2306 is universally used for all commercial-industrial applications. Features * Capable Of 2.5V Gate Drive * Lower On-Resistance D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,[email protected] Continuous Drain Current,[email protected] Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg Ratings 20 ±12 5.3 4.3 10 1.5 0.012 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-ambient 3 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Max. Symbol Rthj-a Ratings 83.3 Unit oC /W Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SGM2306 5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25oC Unless otherwise specified) Parameter ...