RB500V-40

RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features Small surface mounting type Low IR High reliability Applications Low current rectification PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 S9 Top View Marking Code: "S9" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Power Dissipation Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Symbol VRM Ptot VR IO IFSM Tj Ts Value 45 200 40 0.1 1 125 - 40 to + 125 Unit V mW V A A OC OC Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 µA Forward Voltage at IF = 10 mA Reverse Current at VR = 10 V Capacitance Between Terminals at VR = 10 V, f = 1 MHz Note: ESD sensitive product handling required. Symbol Min. V(BR)R 45 VF - IR - CT - Typ. 6 Max. - 0.45 1 - Unit V V µA pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 RB500V-40 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 RB500V-40 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A E bp c HE DA UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 1.80 0.00 1.60 1.35 2.80 1.15 2.30 SEMTECH ELECTRONICS LTD. (Subsid...