FDMS86163P

FDMS86163P P-Channel PowerTrench® MOSFET FDMS86163P P-Channel PowerTrench® MOSFET -100 V, -50 A, 22 mΩ Features „ Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A „ Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A „ Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg „ This product is optimised for fast switching applications as well as load switch applications „ 100% UIL tested „ RoHS Compliant May 2014 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications „ Active Clamp Switch „ Load Switch Top Bottom Pin 1 SS S S GS Power 56 D D D D S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 4) (Note 3) (Note 1a) Ratings -100 ±25 -50 -7.9 -100 486 104 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 1.2 50 °C/W Device Marking FDMS86163P Device FDMS86163P Package Powe...