B5817W-B5819W
Schottky Barrier Diode
+
SOD-123
0.053(1.35) Max.
0.022(0.55) Typ. Min.
Features
-
For use in low vo...
B5817W-B5819W
Schottky Barrier Diode
+
SOD-123
0.053(1.35) Max.
0.022(0.55) Typ. Min.
Features
-
For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications.
0.152(3.85) 0.140(3.55)
0.010(0.25) Min.
0.112(2.85) 0.100(2.55)
0.006(0.15) Typ. Min.
0.067(1.70) 0.055(1.40)
MARKING: B5817W: SJ B5818W:SK B5819W: SL
0.004(0.10) Max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
Non-Repetitive Peak reverse voltage
Peak repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current Peak forward surge current @=8.3ms Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance Ambient
Storage temperature
Junction
to
Symbol
VRM VRRM VRWM
VR VR(RMS)
IO IFSM IFRM Pd
RθJA
TSTG
B5817W
20 20 14
B5818W
30
30
21 1 25 625 250 500 -65~+150
B5819W
40 40 28
Unit V
V
V A A mA mW K/W ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol V(BR) IR
VF
CD
Test conditions
IR= 1mA
VR=20V VR=30V VR=40V
B5817W
B5818W
B5819W
B5817W B5818W B5819W B5817W B5818W B5819W
IF=1A
IF=3A
IF=1A
IF=3A
IF=1A
IF=3A
VR=4V, f=1MHz
MIN
20 30 40
MAX
UNIT V
1
0.45 0.75 0.55 0.875 0.6 0.9
120
mA
V V V
pF
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Typical Characteristics
B5817W-B5819...