DatasheetsPDF.com

BZD27C150P

Taiwan Semiconductor

10V - 220V Zener Diode

BZD27C10P – BZD27C220P Taiwan Semiconductor 1W, 10V - 220V Zener Diode FEATURES ● Silicon zener diodes ● Low profile s...



BZD27C150P

Taiwan Semiconductor


Octopart Stock #: O-1003211

Findchips Stock #: 1003211-F

Web ViewView BZD27C150P Datasheet

File DownloadDownload BZD27C150P PDF File







Description
BZD27C10P – BZD27C220P Taiwan Semiconductor 1W, 10V - 220V Zener Diode FEATURES ● Silicon zener diodes ● Low profile surface-mount package ● Zener and surge current specification ● Low leakage current ● Excellent stability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Voltage regulating ● Reference voltage ● Protection circuit KEY PARAMETERS PARAMETER VALUE UNIT VZ 10 - 220 V Test current IZT 5 - 50 mA Ptot 1 W TJ MAX 175 °C Package Sub SMA Configuration Single die MECHANICAL DATA ● Case: Sub SMA ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.019g (approximately) Sub SMA ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE Forward voltage @ IF = 0.2A Power dissipation VF 1.2 TL = 73°C 2.3 TA = 25°C(1) Ptot 1.0 Non-repetitive peak pulse power dissipation 100μs square pulse(2) PZSM 300 Non-repetitive peak pulse power dissipation 10/1000μs waveform (BZD27C10P to BZD27C100P) PRSM 150 Non-repetitive peak pulse power dissipation 10/1000μs waveform (BZD27C110P to BZD27C220P) PRSM 100 Junction temperature TJ - 55 to +175 Storage temperature Notes: 1. Mounted on Cu-Pad size 5mm x 5mm 2. TJ = 25°C prior to surge TSTG - 55 to +175 UNIT V W W W W W °C °C 1 Version: AB2103 ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)