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BZD27C20P Dataheets PDF



Part Number BZD27C20P
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description 10V - 220V Zener Diode
Datasheet BZD27C20P DatasheetBZD27C20P Datasheet (PDF)

BZD27C10P – BZD27C220P Taiwan Semiconductor 1W, 10V - 220V Zener Diode FEATURES ● Silicon zener diodes ● Low profile surface-mount package ● Zener and surge current specification ● Low leakage current ● Excellent stability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Voltage regulating ● Reference voltage ● Protection circuit KEY PARAMETERS PARAMETER VALUE UNIT VZ 10 - 220 V Test current IZT 5 - 50 mA P.

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BZD27C10P – BZD27C220P Taiwan Semiconductor 1W, 10V - 220V Zener Diode FEATURES ● Silicon zener diodes ● Low profile surface-mount package ● Zener and surge current specification ● Low leakage current ● Excellent stability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Voltage regulating ● Reference voltage ● Protection circuit KEY PARAMETERS PARAMETER VALUE UNIT VZ 10 - 220 V Test current IZT 5 - 50 mA Ptot 1 W TJ MAX 175 °C Package Sub SMA Configuration Single die MECHANICAL DATA ● Case: Sub SMA ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.019g (approximately) Sub SMA ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE Forward voltage @ IF = 0.2A Power dissipation VF 1.2 TL = 73°C 2.3 TA = 25°C(1) Ptot 1.0 Non-repetitive peak pulse power dissipation 100μs square pulse(2) PZSM 300 Non-repetitive peak pulse power dissipation 10/1000μs waveform (BZD27C10P to BZD27C100P) PRSM 150 Non-repetitive peak pulse power dissipation 10/1000μs waveform (BZD27C110P to BZD27C220P) PRSM 100 Junction temperature TJ - 55 to +175 Storage temperature Notes: 1. Mounted on Cu-Pad size 5mm x 5mm 2. TJ = 25°C prior to surge TSTG - 55 to +175 UNIT V W W W W W °C °C 1 Version: AB2103 BZD27C10P – BZD27C220P Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP Junction-to-lead thermal resistance RӨJL 44 Junction-to-ambient thermal resistance RӨJA 88 Junction-to-case thermal resistance RӨJC 48 Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) UNIT °C/W °C/W °C/W ORDERING INFORMATION ORDERING CODE(1) PACKAGE BZD27CxP Sub SMA Notes: 1. “x” defines voltage from 10V(BZD27C10P) to 220V(BZD27C220P) PACKING 10,000 / Tape & Reel 2 Version: AB2103 BZD27C10P – BZD27C220P Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Differential Working Voltage Resistance Temperature Coefficient Part number Marking code VZ @ IZT V rdif @ IZ Ω αZ @ IZ %/oC Test Current IZT mA Min Nom Max Typ Max Min Max BZD27C10P E1 9.4 10 10.6 2 4 0.05 0.09 50 BZD27C11P E2 10.4 11 11.6 4 7 0.05 0.10 50 BZD27C12P E3 11.4 12.05 12.7 4 7 0.05 0.10 50 BZD27C13P E4 12.4 13.25 14.1 5 10 0.05 0.10 50 BZD27C15P E5 13.8 14.7 15.6 5 10 0.05 0.10 25 BZD27C16P E6 15.3 16.2 17.1 6 15 0.06 0.11 25 BZD27C18P E7 16.8 17.95 19.1 6 15 0.06 0.11 25 BZD27C20P E8 18.8 20 21.2 6 15 0.06 0.11 25 BZD27C22P E9 20.8 22.05 23.3 6 15 0.06 0.11 25 BZD27C24P F0 22.8 24.2 25.6 7 15 0.06 0.11 25 BZD27C27P F1 25.1 27 28.9 7 15 0.06 0.11 25 BZD27C30P F2 28 30 32 8 15 0.06 0.11 25 BZD27C33P F3 31 33 35 8 15 0.06 0.11 25 BZD27C36P F4 34 36 38 21 .


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