DatasheetsPDF.com

SD103AWS Dataheets PDF



Part Number SD103AWS
Manufacturers EIC
Logo EIC
Description SCHOTTKY BARRIER DIODES
Datasheet SD103AWS DatasheetSD103AWS Datasheet (PDF)

Certificate TH97/10561QM Certificate TW00/17276EM SD103AWS - SD103CWS SCHOTTKY BARRIER DIODES 0.40 0.25 0.15 (max) FEATURES : * For general purpose applications * The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * These diodes are also available .

  SD103AWS   SD103AWS



Document
Certificate TH97/10561QM Certificate TW00/17276EM SD103AWS - SD103CWS SCHOTTKY BARRIER DIODES 0.40 0.25 0.15 (max) FEATURES : * For general purpose applications * The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * These diodes are also available in the MiniMELF case with type designations LL103A thru LL103C. * Pb / RoHS Free MECHANICAL DATA : * Case : SOD-323 plastic Case * Weight : approx. 0.004 g * SD103AWS Marking Code : S4 * SD103BWS Marking Code : S5 * SD103CWS Marking Code : S6 1.10 1.35 0.80 1.15 SOD-323 1.80 1.60 2.80 2.30 Dimensions in millimeters Maximum Ratings and Thermal Characteristics (TC = 25 °C unless otherwise noted) Parameter Repetitive Peak Reverse Voltage Maximum Single Cycle Surge 10 µs Square Wave Power Dissipation (Infinite Heat Sink) Thermal Resistance Junction to Ambient Air Junction Temperature Storage temperature range SD103AWS SD103BWS SD103CWS Symbol VRRM IFSM Ptot RθJA TJ TSTG Value 40 30 20 2 150(1) 650(1) 125(1) -55 to + 150 Unit V A mW °C/W °C °C Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Reverse Current Forward Voltage Drop Junction Capacitance Reverse Recovery Time SD103AWS SD103BWS SD103CWS Symbol IR VF Ctot Trr Note: (1) Valid provided that electrodes are kept at ambient temperature. Test Condition VR = 30 V VR = 20 V VR = 10 V IF = 20mA IF = 200mA VR = 0 V, f = 1MHz IF = IR = 50mA to 200mA recover to 0.1IR Min - - Typ Max Unit -5 - 5 μA -5 - 0.37 V - 0.60 50 - pF 10 - ns Page 1 of 2 Rev. 01 : May 4, 2006 Forward Current , IF (mA) Certificate TH97/10561QM Certificate TW00/17276EM RATING AND CHARACTERISTIC CURVES ( SD103AWS - SD103CWS ) Typical variation of forward current vs. forward voltage for primary conduction through the schottky barrier 103 102 Typical high current forward conduction curve tp = 300ms , duty cycle = 2% 5 4 Forward Current , IF (A) 10 3 12 10-1 10-2 0 0.5 Forward Voltage , VF (V) 1 Blocking voltage deration versus temperature at various average forward currents 50 40 30 IF=400 mA 20 100 mA 200 mA 10 Reverse Current , IR (μA) 1 0 0 0.5 1.0 1.5 Forward Voltage , VF (V) Typical variation of reverse current at various temperatures 103 Ta =125°C 102 10 1 25°C 0 0 100 200 Ambient Temperature, Ta (°C) 10-1 0 10 20 30 40 Reverse Voltage , VR (V) 50 Reverse Voltage , VR (V) Page 1 of 2 Rev. 01 : May 4, 2006 .


SD103CWS SD103AWS SD103BWS


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)