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SD103CWS Dataheets PDF



Part Number SD103CWS
Manufacturers Vishay
Logo Vishay
Description Small Signal Schottky Diodes
Datasheet SD103CWS DatasheetSD103CWS Datasheet (PDF)

www.vishay.com SD103AWS, SD103BWS, SD103CWS Vishay Semiconductors Small Signal Schottky Diodes MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes/options: 18/10K per 13” reel (8 mm tape), 10K/box 08/3K per 7” reel (8 mm tape), 15K/box FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coup.

  SD103CWS   SD103CWS


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www.vishay.com SD103AWS, SD103BWS, SD103CWS Vishay Semiconductors Small Signal Schottky Diodes MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes/options: 18/10K per 13” reel (8 mm tape), 10K/box 08/3K per 7” reel (8 mm tape), 15K/box FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications • For general purpose applications • AEC-Q101 qualified • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PARTS TABLE PART SD103AWS SD103BWS SD103CWS ORDERING CODE SD103AWS-E3-08 or SD103AWS-E3-18 SD103AWS-HE3-08 or SD103AWS-HE3-18 SD103BWS-E3-08 or SD103BWS-E3-18 SD103BWS-HE3-08 or SD103BWS-HE3-18 SD103CWS-E3-08 or SD103CWS-E3-18 SD103CWS-HE3-08 or SD103CWS-HE3-18 INTERNAL CONSTRUCTION Single diode Single diode Single diode TYPE MARKING S6 S7 S8 REMARKS Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL Repetitive peak reverse voltage Forward continuous current (1) Power dissipation (1) Single cycle surge 10 μs square wave SD103AWS SD103BWS SD103CWS VRRM VRRM VRRM IF Ptot IFS;M Note (1) Valid provided that electrodes are kept at ambient temperature VALUE 40 30 20 350 200 2 THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Thermal resistance junction to ambient air (1) RthJA Junction temperature Tj Operating temperature range Top Storage temperature range Tstg Note (1) Valid provided that electrodes are kept at ambient temperature VALUE 500 125 - 55 to + 125 - 55 to + 150 UNIT V V V mA mW A UNIT K/W °C °C °C Rev. 1.9, 25-Feb-13 1 Document Number: 85682 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SD103AWS, SD103BWS, SD103CWS Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. Leakage current Forward voltage drop Diode capacitance Reverse recovery time VR = 30 V VR = 20 V VR = 10 V IF = 20 mA IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 50 mA to 200 mA, recover to 0.1 IR SD103AWS SD103BWS SD103CWS IR IR IR VF VF CD trr TYP. 50 10 MAX. 5 5 5 370 600 UNIT μA μA μA mV mV pF ns IR - Reverse Current (µA) I F - Forward Current (mA) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 1000 100 100 10 10 11 Tamb = 125 °C 100 °C 75 °C 50 °C 25 °C 0.1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 18488 VF - Forward Voltage (V) Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage 0.01 0 5 10 15 20 25 30 35 40 45 50 20084 VR - Reverse Voltage (V) Fig. 3 - Typical Variation of Reverse Current at Various Temperatures 5 4 tp = 300 ms duty cycle = 2 % 3 2 100 10 C D - Diode Capacitance (pF) I F - Forward Current (A) 1 0 0 18489 0.5 1.0 VF - Forward Voltage (V) 1.5 Fig. 2 - Typical High Current Forward Conduction Curve 1 0 10 20 30 40 50 18491 VR - Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 1.9, 25-Feb-13 2 Document Number: 85682 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SD103AWS, SD103BWS, SD103CWS Vishay Semiconductors VR - Reverse Voltage (V) 50 40 30 I F = 400 mA 20 100 mA 200 mA 10 0 0 18492 100 200 Tamb - Ambient Temperature (°C) Fig. 5 - Blocking Voltage Deration vs. Temperature at Various Average Forward Currents PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0.1 (0.004) max. 1.15 (0.045) 0.8 (0.031) 0.2 (0.008) 0.15 (0.006) 0.10 (0.004) 0° to 8° 0.40 (0.016) 0.25 (0.010) Cathode bar 1.95 (0.077) 1.60 (0.063) 1.5 (0.059) 1.1 (0.043) 0.40 (0.016) 0.20 (0.008) 2.85 (0.112) 2.50 (0.098) Foot print recommendation: 0.6 (0.024) Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 17443 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) Rev. 1.9, 25-Feb-13 3 Document Number: 85682 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FO.


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