SDT12D

Semiconductor SDT12D TVS Diode Features Transient protection for data lines to IEC61000-4-2(ESD) 15KV(air), 8KV(contact ) Small package for use in portable electronics Low operating and clamping voltage Applications Cellular Handsets and Accessories Microprocessor based equipment Notebooks, Desktops and Servers Ordering Information Type NO. SDT12D PIN Connection Marking T7 □ ①② ①Device Code ② Year & Week Code Package Code SOD-323 21 21 1. Anode 2. Cathode KSD-D6C008-001 1 SDT12D Absolute maximum ratings Characteristic Peak pulse power ( tp = 8/20 ㎲ ) Peak pulse current (tp = 8/20 ㎲ ) Lead soldering temperature Juction temperature Storage temperature range Symbol PPK IPP TL TJ Tstg Ratings 350 15 260 (10sec. ) 150 -55 ~ 150 Ta=25°C Unit W A °C °C °C Electrical Characteristics Characteristic Symbol Reverse stand-off voltage Reverse breakdown voltage VRWM VR Reverse leakage current IR Clamping voltage VC Junction capacitance CJ Test Condition It=1mA VR=12V IPP=5A, tp=8/20 ㎲ VR=0V, f=1MHz Min. 13.3 Typ. Ta=25°C Max. Unit 12 V V 1㎂ 19 V 150 pF KSD-D6C008-001 2 Electrical Characteristics Curves Fig. 1 Power derating curve SDT12D Fig. 2 None-repetitive peak pulse power vs pulse time Fig. 3 Pulse Waveform Fig. 4 Clamping voltage vs peak pulse current KSD-D6C008-001 3 Outline Dimension SDT12D KSD-D6C008-001 4 SDT12D The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communica...