N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE3060G
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3060G...
Description
http://www.ncepower.com
Pb Free Product
NCE3060G
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3060G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =60A RDS(ON) <4.0 mΩ @ VGS=10V RDS(ON) <5.5 mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Schematic diagram DFN5X6-8L top view
Package Marking and Ordering Information
Device Marking NCE3060G
Device NCE3060G
Device Package DFN5X6-8L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃) Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID
ID (100℃)
IDM PD
TJ,TSTG
Limit
30 ±20 60 47 200 60 0.5 -55 To 150
Unit
V V A A A W W/℃ ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
2.0 ℃/W
Wuxi NCE Power r Co., Ltd
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http://www.ncepower.com
Pb Free Product
NCE3060G
Electrical Characteristic...
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