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MUR820 Dataheets PDF



Part Number MUR820
Manufacturers SIRECT
Logo SIRECT
Description Ultra Fast Recovery Diodes
Datasheet MUR820 DatasheetMUR820 Datasheet (PDF)

MUR820, MUR860, MUR8100 Ultra Fast Recovery Diodes C(TAB) A A C C A=Anode, C=Cathode, TAB=Cathode MUR820 MUR860 MUR8100 VRSM V 200 600 1000 VRRM V 200 600 1000 Dimensions TO-220AC Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 - 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 .

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MUR820, MUR860, MUR8100 Ultra Fast Recovery Diodes C(TAB) A A C C A=Anode, C=Cathode, TAB=Cathode MUR820 MUR860 MUR8100 VRSM V 200 600 1000 VRRM V 200 600 1000 Dimensions TO-220AC Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 - 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 - 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol Test Conditions IFRMS IFAVM IFRM IFSM I2t TVJ=TVJM TC=115oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC TVJ=150oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine TVJ=45oC TVJ=150oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine TVJ TVJM Tstg Ptot TC=25oC Md Mounting torque Weight Maximum Ratings 16 8 130 100 110 85 95 50 50 36 37 -40...+150 150 -40...+150 50 0.4...0.6 2 Unit A A A2s oC W Nm g MUR820, MUR860, MUR8100 Ultra Fast Recovery Diodes Symbol Test Conditions IR VF VTO rT RthJC RthCK RthJA trr IRM TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=8A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC VR=350V; IF=8A; -diF/dt=64A/us; L<_0.05uH; TVJ=100oC Characteristic Values typ. max. 20 10 1.5 1.3 1.5 0.98 28.7 2.5 0.5 60 35 50 2.5 2.8 Unit uA uA mA V V m K/W ns A FEATURES * International standard package JEDEC TO-220AC * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling MUR820, MUR860, MUR8100 Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -di /dt. F Fig. 3 Peak reverse current versus -diF/dt. Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus di /dt. F Fig. 7 Transient thermal impedance junction to case. .


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