Document
MUR820, MUR860, MUR8100
Ultra Fast Recovery Diodes
C(TAB)
A
A C
C
A=Anode, C=Cathode, TAB=Cathode
MUR820 MUR860 MUR8100
VRSM V
200 600 1000
VRRM V
200 600 1000
Dimensions TO-220AC
Dim.
A B C D E F G H J K L M N Q
Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070
- 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055
Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77
- 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39
Symbol
Test Conditions
IFRMS IFAVM IFRM
IFSM
I2t
TVJ=TVJM TC=115oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM
TVJ=45oC TVJ=150oC
t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
TVJ=45oC TVJ=150oC
t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
TVJ TVJM Tstg
Ptot
TC=25oC
Md Mounting torque
Weight
Maximum Ratings
16 8 130
100 110 85 95
50 50 36 37
-40...+150 150
-40...+150
50
0.4...0.6
2
Unit A
A
A2s
oC W Nm g
MUR820, MUR860, MUR8100
Ultra Fast Recovery Diodes
Symbol
Test Conditions
IR
VF
VTO rT RthJC RthCK RthJA trr IRM
TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=8A; TVJ=150oC
TVJ=25oC For power-loss calculations only TVJ=TVJM
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC VR=350V; IF=8A; -diF/dt=64A/us; L<_0.05uH; TVJ=100oC
Characteristic Values typ. max.
20 10 1.5
1.3 1.5
0.98
28.7
2.5 0.5
60
35 50
2.5 2.8
Unit
uA uA mA V V m
K/W
ns A
FEATURES
* International standard package JEDEC TO-220AC
* Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency switching devices
* Antisaturation diode * Snubber diode * Free wheeling diode in converters
and motor control circuits * Rectifiers in switch mode power
supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation * Low voltage peaks for reduced
protection circuits * Low noise switching * Low losses * Operating at lower temperature or
space saving by reduced cooling
MUR820, MUR860, MUR8100
Ultra Fast Recovery Diodes
Fig. 1 Forward current versus voltage drop.
Fig. 2 Recovery charge versus -di /dt. F
Fig. 3 Peak reverse current versus -diF/dt.
Fig. 4 Dynamic parameters versus junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage versus di /dt.
F
Fig. 7 Transient thermal impedance junction to case.
.