STS20N3LLH6

STS20N3LLH6 N-channel 30 V, 0.004 Ω, 20 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STS20N3LLH6 30 V 0.0047 Ω 20 A t(s)■ RDS(on) * Qg industry benchmark uc■ Extremely low on-resistance RDS(on) d■ High avalanche ruggedness ro■ Low gate drive power losses P■ Very low switching gate charge leteApplication so■ Switching applications - ObDescription t(s)This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, ucwith a new gate structure.The resulting Power dMOSFET exhibits the lowest RDS(on) in all Obsolete Propackages. SO-8 Figure 1. Internal schematic diagram Table 1. Device summary Order code STS20N3LLH6 Marking 20G3L Package SO-8 Packaging Tape and reel March 2010 Doc ID 15528 Rev 2 1/13 www.st.com 13 Contents Contents STS20N3LLH6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Obsolete Product(s) - Obsolete Product(s)5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 Doc I...