Document
SM1A10NSU
Features
· 100V/10A,
RDS(ON)=175mW (max.) @ VGS=10V RDS(ON)=235mW (max.) @ VGS=4.5V
· ESD Protected · Reliable and Rugged · Lead Free and Green Devices Available
(RoHS Compliant)
Applications
· Power Management in TV Inverter.
®
N-Channel Enhancement Mode MOSFET
Pin Description
D S
G
Top View of TO-252-3
D
G
S
N-Channel MOSFET
Ordering and Marking Information
SM1A10NS
Assembly Material Handling Code Temperature Range Package Code
Package Code
U : TO-252-3 Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM1A10NS U :
SM1A10N XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013
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SM1A10NSU
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RqJC Thermal Resistance-Junction to Case RqJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy, L=0.3mH
TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C
®
Rating
100 ±20 175 -55 to 175
3 35 25 10 7 60 30 2.5 50 15
Unit
V °C °C A A
A
W °C/W °C/W
mJ
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics VSDa Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge
Test Conditions
SM1A10NSU Unit
Min. Typ. Max.
VGS=0V, IDS=250mA
100 -
-V
VDS=80V, VGS=0V TJ=85°C
-
-1 - 30 mA
VDS=VGS, IDS=250mA
1 2 3V
VGS=±16V, VDS=0V
- - ±10 mA
VGS=10V, IDS=3A VGS=4.5V, IDS=1A
- 135 175 - 180 235 mW
ISD=3A, VGS=0V
- 0.8 1.1 V
- 36 - ns IDS=5A, dlSD/dt=100A/ms - 49 - nC
Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013
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SM1A10NSU
®
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics b
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time
tr Turn-on Rise Time td(OFF) Turn-off Delay Time
tf Turn-off Fall Time Gate Charge Characteristics b
VGS=0V, VDS=30V, Frequency=1.0MHz
VDD=30V, RL=30W, IDS=1A, VGEN=10V, RG=6W
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS=50V, VGS=10V, IDS=5A
Note a : Pulse test ; pulse width£300ms, duty cycle£2%.
Note b : Guaranteed by design, not subject to production testing.
SM1A10NSU Unit
Min. Typ. Max.
- 500 - 35 - pF - 20 - 11 21 - 10 19
ns - 21 39 - 13 24
- 9.5 13 - 1.9 - nC - 2.1 -
Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013
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SM1A10NSU
®
Typical Operating Characteristics
Ptot - Power (W) ID- Drain Current (A)
Power Dissipation
70
60
50
40
30
20
10 0 TC=25oC 0 20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
Drain Current
12
10
8
6
4
2 0 TC=25oC,VG=10V
0 20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
ID- Drain Current (A)
Rds(on) Limit
Normalized Transient Thermal Resistance
Safe Operation Area
50
10 1ms 10ms 100ms
1 1s DC
0.1
0.01 TC=25OC 0.01 0.1 1 10 100 500
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
2
1 Duty = 0.5
0.2 0.1 0.05
0.1 0.02 0.01
Single Pulse
0.01 1E-4 1E-3 0.01
Mounted on 1in2 pad RqJA :50oC/W
0.1 1 10 100
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013
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SM1A10NSU
®
Typical Operating Characteristics (Cont.)
ID- Drain Current (A)
Output Characteristics
15 VGS=6,7,8,9,10V
12 5V
9
4.5V 6
3 4V
3.5V 0
012345
VDS - Drain - Source Voltage (V)
DS(ON)R - On - Resistance (mW)
Drain-Source On Resistance
400
350 300 VGS=4.5V
250
200 VGS=10V
150
100
50
0 0 3 6 9 12 15
ID- Drain Current (A)
DS(ON)R - On - Resistance (mW)
Gate-Source On Resistance
400 IDS=5A
350
300
2.