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SM1A10NSU Dataheets PDF



Part Number SM1A10NSU
Manufacturers Sinopower
Logo Sinopower
Description N-Channel Enhancement Mode MOSFET
Datasheet SM1A10NSU DatasheetSM1A10NSU Datasheet (PDF)

SM1A10NSU Features · 100V/10A, RDS(ON)=175mW (max.) @ VGS=10V RDS(ON)=235mW (max.) @ VGS=4.5V · ESD Protected · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) Applications · Power Management in TV Inverter. ® N-Channel Enhancement Mode MOSFET Pin Description D S G Top View of TO-252-3 D G S N-Channel MOSFET Ordering and Marking Information SM1A10NS Assembly Material Handling Code Temperature Range Package Code Package Code U : TO-252-3 Operating Junction Tempe.

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SM1A10NSU Features · 100V/10A, RDS(ON)=175mW (max.) @ VGS=10V RDS(ON)=235mW (max.) @ VGS=4.5V · ESD Protected · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) Applications · Power Management in TV Inverter. ® N-Channel Enhancement Mode MOSFET Pin Description D S G Top View of TO-252-3 D G S N-Channel MOSFET Ordering and Marking Information SM1A10NS Assembly Material Handling Code Temperature Range Package Code Package Code U : TO-252-3 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM1A10NS U : SM1A10N XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 1 www.sinopowersemi.com SM1A10NSU Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RqJC Thermal Resistance-Junction to Case RqJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy, L=0.3mH TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C ® Rating 100 ±20 175 -55 to 175 3 35 25 10 7 60 30 2.5 50 15 Unit V °C °C A A A W °C/W °C/W mJ Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON) a Drain-Source On-state Resistance Diode Characteristics VSDa Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions SM1A10NSU Unit Min. Typ. Max. VGS=0V, IDS=250mA 100 - -V VDS=80V, VGS=0V TJ=85°C - -1 - 30 mA VDS=VGS, IDS=250mA 1 2 3V VGS=±16V, VDS=0V - - ±10 mA VGS=10V, IDS=3A VGS=4.5V, IDS=1A - 135 175 - 180 235 mW ISD=3A, VGS=0V - 0.8 1.1 V - 36 - ns IDS=5A, dlSD/dt=100A/ms - 49 - nC Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 2 www.sinopowersemi.com SM1A10NSU ® Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Dynamic Characteristics b Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics b VGS=0V, VDS=30V, Frequency=1.0MHz VDD=30V, RL=30W, IDS=1A, VGEN=10V, RG=6W Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=50V, VGS=10V, IDS=5A Note a : Pulse test ; pulse width£300ms, duty cycle£2%. Note b : Guaranteed by design, not subject to production testing. SM1A10NSU Unit Min. Typ. Max. - 500 - 35 - pF - 20 - 11 21 - 10 19 ns - 21 39 - 13 24 - 9.5 13 - 1.9 - nC - 2.1 - Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 3 www.sinopowersemi.com SM1A10NSU ® Typical Operating Characteristics Ptot - Power (W) ID- Drain Current (A) Power Dissipation 70 60 50 40 30 20 10 0 TC=25oC 0 20 40 60 80 100 120 140 160 180 Tj - Junction Temperature (°C) Drain Current 12 10 8 6 4 2 0 TC=25oC,VG=10V 0 20 40 60 80 100 120 140 160 180 Tj - Junction Temperature (°C) ID- Drain Current (A) Rds(on) Limit Normalized Transient Thermal Resistance Safe Operation Area 50 10 1ms 10ms 100ms 1 1s DC 0.1 0.01 TC=25OC 0.01 0.1 1 10 100 500 VDS - Drain - Source Voltage (V) Thermal Transient Impedance 2 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 1E-4 1E-3 0.01 Mounted on 1in2 pad RqJA :50oC/W 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 4 www.sinopowersemi.com SM1A10NSU ® Typical Operating Characteristics (Cont.) ID- Drain Current (A) Output Characteristics 15 VGS=6,7,8,9,10V 12 5V 9 4.5V 6 3 4V 3.5V 0 012345 VDS - Drain - Source Voltage (V) DS(ON)R - On - Resistance (mW) Drain-Source On Resistance 400 350 300 VGS=4.5V 250 200 VGS=10V 150 100 50 0 0 3 6 9 12 15 ID- Drain Current (A) DS(ON)R - On - Resistance (mW) Gate-Source On Resistance 400 IDS=5A 350 300 2.


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