Document
SS22-SS215 SCHOTTKY BARRIER RECTIFIERS
PRODUCT SUMMARY
2.0 AMPS Surface Mount
FEATURES
For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260 oC / 10 seconds at terminals
MECANICAL DATA
Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS-481
Weight: 0.093gram
SMB/DO-214AA
.083(2.10) .077(1.95)
.147(3.73) .137(3.48)
.187(4.75) .167(4.25)
.012(.31) .006(.15)
.103(2.61) .078(1.99)
.056(1.41) .035(0.90)
.008(.20) .004(.10)
.209(5.30) .201(5.10)
.012(.31) .006(.15)
Dimensions in inches and (millimeters)
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%
Type Number
Symbol SS SS SS SS SS SS SS 22 23 24 25 26 29 210
Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100
Maximum RMS Voltage
VRMS 14 21 28 35 42 63 70
Maximum DC Blocking Voltage
VDC 20 30 40 50 60 90 100
Maximum Average Forward Rectified Current at TL(See Fig. 1)
I(AV)
2.0
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load (JEDEC method )
IFSM
50
Maximum Instantaneous Forward Voltage
(Note 1)
IF= 2.0A @ 25oC
@ 100oC
VF
0.5 0.4
0.70 0.85 0.65 0.70
Maximum DC Reverse Current @ TA =25 oC at Rated DC Blocking Voltage @ TA=125 oC
IR
0.4 10
0.1 5.0
Typical Junction Capacitance (Note 3)
Cj
130
Typical Thermal Resistance ( Note 2 )
Operating Temperature Range Storage Temperature Range
R θJL R θJA
TJ
TSTG
-65 to +125
17 75
-65 to +150 -65 to +150
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.4” x 0.4”(10mm x 10mm) Copper Pad Areas. 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
SS 215 150 105 150
0.95 0.80
Units
V V V A
A
V
mA mA pF oC/W oC oC
04/05/2007 Rev.1.00
www.SiliconStandard.com
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SS22-SS215
RATINGS AND CHARACTERISTIC CURVES (SS22 THRU SS215)
AVERAGE FORWARD CURRENT. (A)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
2.0
RESISTIVE OR INDUCTIVE LOAD
1.5 SS22-SS24
SS25-SS215
1.0
0.5 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS
0 LEAD TEMPERATURE. (OC)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
50 TJ=25OC
10 SS25-SS26
PEAK FORWARD SURGE CURRENT. (A)
FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
50
8.3ms Single Half Sine Wave 40 JEDEC Method
AT RATED TL
30
20
10
0 1 10
NUMBER OF CYCLES AT 60Hz
100
FIG.4-TYPICALREVERSE CHARACTERISTICS
100 SS22-SS24 SS25-SS215
TJ=125OC 10
INSTANTANEOUS REVERSE CURRENT. (mA)
INSTANTANEOUS FORWARD CURRENT. (A)
SS22-SS24
1
SS29-SS210
1 TJ=75OC 0.1
0.1 SS215
0.01 0
PULSE WIDTH=300 S 1% DUTY CYCLE
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE. (V)
FIG.5-TYPICAL JUNCTION CAPACITANCE
400
Tj=25OC f=1.0MHz Vsig=50mVp-p
100
0.01
TJ=25OC
0.001 0
20
40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS
100
10
TRANSIENT THERMAL IMPEDANCE. (OC/W)
JUNCTION CAPACITANCE.(pF)
10 0.1
SS29-SS215 SS22-SS24 SS25-SS26
1
10
REVERSE VOLTAGE. (V)
1
100 0.1 0.01
0.1 1 10 T, PULSE DURATION. (sec)
100
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly orVby implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
04/05/2007 Rev.1.00
www.SiliconStandard.com
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