MMBT2222AT

RoHS MMBT2222AT MMBT2222AT TRANSISTOR (NPN) SOT-523 FEATURES 1. BASE Power dissipation PCM: 0.15 W (Tamb=25℃) DCollector current ICM: 0.6 A TCollector-base voltage V(BR)CBO: 75 V .,LOperating and storage junction temperature range 2. EMITTER 3. COLLECTOR TJ, Tstg: -55℃ to +150℃ OELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX CCollector-base breakdown voltage Collector-emitter breakdown voltage ICEmitter-base breakdown voltage Collector cut-off current NCollector cut-off current Emitter cut-off current RODC current gain CTCollector-emitter saturation voltage LEBase-emitter saturation voltage ETransition frequency Output Capacitance JDelay time ERise time WStorage time V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob td tr tS Ic= 10µA, IE=0 Ic= 10mA, IB=0 IE=10µA, IC=0 VCB=70V, IE=0 VCE=35V, IB=0 VEB= 3V, IC=0 VCE=10V, IC= 0.1mA VCE=10V, IC= 1mA VCE=10V, IC= 10mA VCE=10V, IC= 150mA VCE=10V, IC= 500mA IC=150 mA, IB= 15mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA VCE=20V, IC= 20mA f=100MHz VCB=10V, IE= 0 f=1MHz VCC=30V, IC=150mA VBE(off)=0.5V, IB1=15mA VCC=30V, IC=150mA 75 40 6 35 50 75 100 40 300 0. 1 0. 1 0. 1 0.3 1 1.2 2 8 10 25 225 UNIT V V V µA µA µA V V V V MHz pF nS nS nS Fall time tf IB1= IB2= 15mA 60 nS Marking :1P WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com RoHS MMBT222...