MMBT2222A

De ■ ● ● NPN Transistors MMBT2222A (KMBT2222A) SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 ) 1.9 +0.1 -0.2 +0.22.8 -0.1 +0.21.6 -0.1 0.55 0.4 s st s Unit: mm 0.15 +0.02 -0.02 +0.21.1 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Power Dissipation Thermal resistance from junction to ambient Junction Temperature Storage Temperature Range ■ Electrical Characteristics Ta = 25℃ Symbol VCBO VCEO VEBO IC PD RθJA TJ Tstg Rating 70 40 6 600 250 417 150 -55 to 150 Unit V mA mW ℃/W ℃ Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector cutoff current Collector cut-off current Emitter cutoff current DC current gain Symbol Test conditions V(BR)CBO IC = 100 μA, IE = 0 V(BR)CEO IC = 10 mA, IB = 0 V(BR)EBO IE = 100 μ A, IC = 0 ICBO VCB=60V, IE=0 ICEX VCE=30V,VEB(off)=-3V IEBO VEB= 3V, IC=0 VCE=10V, IC= 0.1mA hFE VCE=10V, IC= 150mA VCE=10V, IC= 500mA collector-emitter saturation voltage * VCE(sat) IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA base-emitter saturation voltage * Transition frequency Delay time Rise time Storage time Fall time VBE(sat) fT td tr ts tf IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA IC = 20 mA; VCE = 20 V; f = 100 MHz VCC=30V, VBE(off)=-0.5V, IC=150mA , IB1= 15mA VCC=30V, IC=150mA,IB1=-IB2=15mA * pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. ■...