H8050

SMD Type NPN Tra nsistors H8050 Transistors ■ Features ● Collector Power Dissipation: PC=0.5W ● Collector Current: IC=1.5A ● Comlementary to H8550 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 25 5 1.5 0.5 150 -55 to +150 Unit V V V A W ℃ ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Base-emitter positive favor voltage output capacitance Transition frequency ■ Classification of hfe(1) Type Range Marking H8050-B 85-160 8050B H8050-C 120-200 8050C Symbol Test conditions VCBO IC= 100μA, IE=0 VCEO IC= 0.1mA, IB=0 VEBO IE= 100μA, IC=0 ICBO VCB= 40 V,IE=0 ICEO VCE= 20V, IB=0 IEBO VEB= 5V, IC=0 VCE= 1V, IC= 100mA hFE VCE= 1V, IC= 800mA VCE(sat) IC=800mA, IB= 80mA VBE(sat) IC=800mA, IB=80mA VBE(on) Ic=1V,VCE=10mA VBEF IB=1A Cob VCB=10V,IE=0,f=1MHz fT VCE= 10V, IC=50mA H8050-D 160-300 8050D H8050-D3 300-400 8050D3 1.Base 2.Collector 3.Emitter Min Typ Max Unit 40 V 25 V 5V 0.1 μA 0.1 μA 0.1 μA 85 400 40 0.5 V 1.2 V 1V 1.55 V 15 pF 100 MHz www...