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MBR1050 Dataheets PDF



Part Number MBR1050
Manufacturers Silicon Standard
Logo Silicon Standard
Description Schottky Barrier Rectifiers
Datasheet MBR1050 DatasheetMBR1050 Datasheet (PDF)

MBR10XX SERIES Schottky Barrier Rectifiers PRODUCT SUMMARY Reverse Voltage 35 to 60 Volts Forward current 10.0 Amperes FEATURES Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protection For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications High temperature soldering guaranteed: 250°C/10 seconds, 0.25" (6.35m.

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MBR10XX SERIES Schottky Barrier Rectifiers PRODUCT SUMMARY Reverse Voltage 35 to 60 Volts Forward current 10.0 Amperes FEATURES Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protection For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications High temperature soldering guaranteed: 250°C/10 seconds, 0.25" (6.35mm) from case MECHANICAL DATA Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 ounce, 2.24 grams Pb-free; RoHS-compliant TO-220AC ITO-220AC 07/28/2007 Rev.1.00 www.SiliconStandard.com 1 MBR10XX SERIES Mounting Pad Layout TO-263AB TO-263AB(D2PAK) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TC=25oC unless otherwise noted) Parameter Symbol MBR1035 MBR1045 MBR1050 MBR1060 Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current (See Fig. 1) Peak repetitive forward current (sq. wave, 20KHz) at TC=135oC Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Peak repetitive reverse current at tp = 2.0us, 1KHz Voltage rate of change (rated V ) R Maximum instantaneous forward voltage (Note 4) Maximum instantaneous reverse current at rated DC blocking voltage (Note 4) at IF=10A, TC=25oC at IF=10A, TC=125oC at IF=20A, TC=25oC at IF=20A, TC=125oC TC=25oC TC=125oC Maximum thermal resistance from junction to case RMS Isolation voltage (MBRF type only) from terminals to heatsink with t = 1.0 second, RH < 30% Operating junction temperature range Storage temperature range VRRM VRWM VDC IF(AV) IFRM IFSM IRRM dv/dt VF IR RθJC VISOL T J TSTG 35 45 50 60 35 45 50 60 35 45 50 60 10 20 150 1.0 0.5 10,000 0.57 0.84 0.72 0.80 0.70 0.95 0.85 0.10 15 MBR 2.0 / MBRF 4.0 / MBRB 2.0 4500 (Note 1) 3500 (Note 2) 1500 (Note 3) -55 to +150 -55 to +150 Notes: 1. Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset 2. Clip mounting (on case), where leads do overlap heatsink 3. Screw mounting with 4-40 screw, where washer diameter is < 4.9 mm (0.19") 4. Pulse test: 300us pulse width, 1% duty cycle Unit Volts Volts Volts Amps Amps Amps Amps V/us Volts mA oC/W Volts oC oC 07/28/2007 Rev.1.00 www.SiliconStandard.com 2 MBR10XX SERIES RATINGS AND CHARACTERISTIC CURVES (TA=25oC unless otherwise noted) Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 07/28/2007 Rev.1.00 www.SiliconStandard.com 3 .


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