MBR1045

SEMICONDUCTOR MBR1045 Series RRooHHSS Nell Semiconductors Schottky Rectifier, 10 A Available RoHS* COMPLIANT FEATURES 150°C TJ operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Designed and qualified according to JEDEC-JESD47 DESCRIPTION The MBR1045 Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. APPLICATIONS Switching mode power supplies Converters Freewheeling diodes Reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS lF(AV) Rectangular waveform lFRM TJ = 135°C VRRM lFSM tp = 5 μs sine VF 10 Apk, TJ = 125°C TJ Range VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM Base cathode 2 13 Cathode Anode TO-220AC PRODUCT SUMMARY Package lF(AV) VR VF at lF lRM max. TJ max. Diode variation EAS TO-220AC 10A 45V 0.57V 15mA at 125°C 150°C Single die 8 mJ VALUE 10 20 45 1060 0.57 -65 to 150 UNIT A A V A V °C MBR1045 45 UNIT V www.nellsemi.com Page 1 of 5 SEMICONDUCTOR MBR1045 Series RRooHHSS Nell Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Maximum average forward current lF(AV) TC = 131°C, rated VR Peak repetitiv...