DatasheetsPDF.com

K2926

Hitachi Semiconductor
Part Number K2926
Manufacturer Hitachi Semiconductor
Description 2SK2926
Published May 12, 2016
Detailed Description 2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.04...
Datasheet PDF File K2926 PDF File

K2926
K2926

Overview
2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.
042Ω typ.
• 4V gate drive devices.
• High speed switching Outline DPAK–2 D G S 44 12 3 12 3 1.
Gate 2.
Drain 3.
Source 4.
Drain ADE-208-535 1st.
Edition 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Ta = 25°C 3.
Value at Ta = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I *1 D(pulse) I DR I AP * ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)