Schottky Barrier Diodes
RB160VA-40FH
Applications General rectification
Dimensions (Unit : mm)
1.3±0.05
0.1 7±0.1 ...
Schottky Barrier Diodes
RB160VA-40FH
Applications General rectification
Dimensions (Unit : mm)
1.3±0.05
0.1 7±0.1 0.05
Features 1) Small mold type. (TUMD2) 2) Low VF, Low IR. 3) High reliability.
Construction Silicon epitaxial planar
0.8±0 .05
ROHM : TUMD2
0.6±0 .2 0.1
dot (year week factory) + day
1.9±0 .1 2.5±0.2
0.8 0.5 2.0
AEC-Q101 Qualified
Land size figure (Unit : mm)
1.1
TUMD2
Structure
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1 0.05
0.25±0.05
1.75±0.1
3.5±0.05 2.8±0.05
8.0±0.2 2.8±0.05
1.43±0.05
4.0±0.1
φ1.0±0.2 0
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current
VRM VR Io
Forward current surge peak (60Hz・1cyc) Forward current surge peak(t=100μs・1cyc) Junction temperature
IFSM IFSM Tj
Storage temperature
Tstg
Limits
40 40 1 5 10 150 -40 to +150
Unit V V A A A ℃ ℃
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
Forward voltage Reverse current
VF - 0.50 IR - 1.5
Max. 0.55 50
Unit Conditions
V IF=700mA μA VR=40V
0.9±0.08
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1/3
2010.06 - Rev.D
RB160VA-40FH
FORWARD CURRENT:IF(A)
Electrical characteristic curves (Ta=25C)
1 Ta=150℃
Ta=125℃ 0.1 Ta=75℃
Ta=25℃
0.01 Ta=-25℃
0.001 0
100 200 300 400 500
FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
600
REVERSE CURRENT:IR(uA)
100000 10000 1000 100 10 1 0.1 0.01 0.001 0
Ta=150℃ ...