Schottky Barrier Diode
RB060M-40DD
Applications General rectification
External Dimensions(Unit : mm)
1.6±0.1
0.1±0...
Schottky Barrier Diode
RB060M-40DD
Applications General rectification
External Dimensions(Unit : mm)
1.6±0.1
0.1±0.1 0.05
Datasheet AEC-Q101 Qualified
Land Size Figure(Unit : mm)
1.2
2.6±0.1 3.5±0.0.212
0.85 3.05
Features 1)Small power mold type.(PMDU) 2)High reliability
1
Construction Silicon epitaxial
0.9±0.1
ROHM : PMDU JEDEC :SOD-123
Manufacture Date
0.8±0.1
PMDU
Structure
Taping Dimensions(Unit : mm)
4.0±0.1 2.0±0.05
φ11..5555±00.0.055
0.25±0.05
1.75±0.1
8.0±0.2 3.37.7110.±00.81
3.5±0.05
1.81±0.1
4.0±0.1
φ11..00±00..11
1.5MAX
Absolute Maximum Ratings(Ta=25°C)
Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) Junction temperature
Symbol VRM VR Io IFSM Tj
Storage temperature
Tstg
(*1)Mounting on epoxi board. 180°Half sine wave
Electrical Characteristics(Ta=25°C) Parameter
Forward voltage Reverse current
Symbol VF IR
Limits 40 40 2 30 150
55 to 150
Min. Typ. Max. 0.56 500
Unit V V A A °C °C
Unit Conditions V IF=2.0A A VR=40V
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1/4
2015.08 - Rev.B
RB060M-40DD
Data Sheet
FORWARD CURRENT:IF(A)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
10
Ta = 150°C Ta = 125°C 1
Ta = 75°C 0.1
Ta = 25°C
0.01 0
Ta = 25°C
100 200 300 400 500
FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
600
1000
f = 1MHz
100
10 0
30 25 20 15 10
5 0
5 10 15 20 25
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTE...