P2806BD

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P2806BD TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 28mΩ ID 30A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJC Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. TYPICAL 1. GATE 2. DRAIN 3. SOURCE LIMITS ±20 30 19 100 30 43 50 20 -55 to 150 UNITS V A mJ W °C MAXIMUM 2.5 40 UNITS °C / W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 4.5V, ID = 12A VGS = 10V, ID = 20A LIMITS UNIT MIN TYP MAX 60 1 1.5 3 V ±250 nA 1 µA 10 100 A 28 38 mΩ 22.3 28 REV 1.0 Feb-18-2011 1 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P2806BD TO-252...