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SB1A0 Dataheets PDF



Part Number SB1A0
Manufacturers LGE
Logo LGE
Description Schottky Barrier Rectifiers
Datasheet SB1A0 DatasheetSB1A0 Datasheet (PDF)

Features xxxx Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94V-0 Mechanical Data Case:JEDEC DO--41,molded plastic Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any SB120-SB1A0 Schottky Barrier Rectifiers VOLTAGE RANGE.

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Features xxxx Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94V-0 Mechanical Data Case:JEDEC DO--41,molded plastic Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any SB120-SB1A0 Schottky Barrier Rectifiers VOLTAGE RANGE: 20 --- 100 V CURRENT: 1.0 A DO - 41 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 9.5mm lead length, (see fig.1) Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load @TJ=125 Maximum instantaneous forward voltage @ 1.0A VRRM VRMS VDC IF(AV) SB 120 SB 130 SB 140 SB 150 SB 160 SB 170 SB 180 SB 190 SB 1A0 UNITS 20 30 40 50 60 70 80 90 100 V 14 21 28 35 42 49 56 63 70 V 20 30 40 50 60 70 80 90 100 V 1.0 A IFSM 40.0 A VF 0.5 0.7 0.85 V Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100 IR Typical junction capacitance (Note1) CJ Typical thermal resistance (Note2) RθJA Operating junction temperature range TJ Storage temperature range TSTG NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Thermalresistance junction to ambient 10.0 110 - 55 --- + 125 0.5 5.0 80 50 - 55 --- + 150 - 55 --- + 150 mA pF /W http://www.luguang.cn mail:[email protected] Ratings AND Charactieristic Curves FIG.1 -- FORWARD CURRENT DERATING CURVE SB120-SB1A0 Schottky Barrier Rectifiers FIG.2 --MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES AVERAGE FORWARD CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES 1.0 0.75 0.5 0.25 0 0 SB120-SB140 Resistive or Inductive Load 0.375"(9.5mm) Lead Length SB150-SB1A0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, FIG.3 --TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 10 SB150-SB160 SB120-SB140 1 P ulse w idth=3 00 s 1% Du ty C ycle SB170-SB1A0 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.5--TYPICAL JUNCTION CAPACITANCE 400 SB120-SB140 TJ=25 f=1.0MHz Vsig=50mVp-p 100 SB150-SB1A0 10 0.1 1 10 100 REVERSE VOLTAGE,VOLTS http://www.luguang.cn TRANSIENT THERMAL IMPEDANCE , /W INSTANTANEOUS REVERSE LEAKAGE CURRENT, MILLIAMPERES 50 40 30 20 10 01 TJ=TJMAX 8.3ms Single Half Sine-Wave 10 100 NUMBER OF CYCLES AT 60Hz FIG.4--TYPICAL REVERSE CHARACTERISTICS 1000 100 TJ=100 10 1 TJ=75 0.1 0.01 0 TJ=25 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.6--TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 PULSE DURATION,Sec. mail:[email protected] 100 JUNCTION CAPACITANCE,pF .


SB190 SB1A0 SB120


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