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| Features |
• Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial D TO-252 GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) P. |
VBZE10N65S VBsemi
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VBsemi |
N-Channel MOSFET |
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VBsemi |
N-Channel MOSFET |
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VBsemi |
N-Channel MOSFET |
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VBsemi |
P-Channel MOSFET |
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VBsemi |
Dual N-Channel MOSFET |
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VBsemi |
N-Channel Power MOSFET |
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VBsemi |
N-Channel MOSFET |
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VBsemi |
N-Channel MOSFET |
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VBsemi |
N-Channel MOSFET |
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VBsemi |
N-Channel MOSFET |
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STMicroelectronics |
HIGH VOLTAGE IGNITION COIL DRIVER POWER IC |
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STMicroelectronics |
HIGH VOLTAGE IGNITION COIL DRIVER POWER IC |
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