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| Features |
• Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available Available RoHS * COMPLIANT S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation P. |
VB2658 VBsemi
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Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
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Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
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Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
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Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
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Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
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Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
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Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
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Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
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Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
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Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
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Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
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Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
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