UT2312H Datasheet (PDF). Stock, Price

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UT2312H N-CHANNEL POWER MOSFET Datasheet

Features

* RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A
* RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A
* Advanced trench process technology
* Excellent thermal and electrical capabilities
* High density cell design for ultra low on-resistance
 SYMBOL 3.Drain Power MOSFET 3 2 1 SOT-23-3 (JEDEC TO-236) 1.Gate 2.Source
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2312HL-AE2-R UT2312HG-AE2-R Note: Pin Assignment: G: Gate S: Source D: Drain UT2312HG-AE2-R (1)Packing Type (2)Package Type (3)Green Package Package SOT-23-3 Pin Assignment 1 2 3 G S D Packing Tape Reel (1) R: Tap.

UT2312H

The UT2312H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate vo.

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