TMU18N20ZG N-channel MOSFET

TMU18N20ZG N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD18N20Z(G)/TMU18N20Z(G) BVDSS 200V N-channel MOSFET ID RDS(on) MAX 18A <0.17W I-PAK Device TMD18N20Z / TMU18N20Z TMD18N20ZG / TMU18N20ZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter.

Features

 Low gate charge
 100% avalanche tested
 Improved dv/dt capability
 RoHS compliant
 Halogen free package
 JEDEC Qualification D-PAK TMD18N20Z(G)/TMU18N20Z(G) BVDSS 200V N-channel MOSFET ID RDS(on) MAX 18A <0.17W I-PAK Device TMD18N20Z / TMU18N20Z TMD18N20ZG / TMU18N20ZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Diss.