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Si2319CDS
P-Channel 40 V (D-S) MOSFET
Description
Si2319CDS Vishay Siliconix P-Channel 40 V (D-S)
MOSFET
FEATURES ID (A)a - 4.4 7 nC - 3.7 Qg (Typ.) PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) 0.077 at VGS = - 10 V 0.108 at VGS = - 4.5 V Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power
MOSFET
100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-236 (SOT-23) ...
Vishay Siliconix
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