STP20N10
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STP20N10
s s s s s s s s
V DSS 100 V
R DS( on) < 0.12 Ω
ID 20 A
TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
3 1 2
TO-2...
