Advanced N-Ch Power MOSFET
Description
STK0380F
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
Drain-source breakdown voltage: BVDSS=800V (Min.) Low gate charge: Qg=14.2nC (Typ.) Low drain-source On resistance: RDS(on)=3.5Ω (Typ.) RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
STK0380F
STK0380
TO-220F-3L
GDS
TO...
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